Skip to main content

Posts

Showing posts from May 20, 2016

IBM Scientists on a new memory technology known as phase-change memory (PCM)

In our data-driven age, challenges and stakes related to data are huge and strategic, so that industries and scientists need streamlined tools and technologies to leverage this unmatched opportunity. 
When it comes to a new memory technology known as phase-change memory (PCM), for those who are unfamiliar, PCM is attracting the industry’s attention as a potential universal memory technology based on its combination of read/write speed, endurance, non-volatility and density. For example, PCM doesn’t lose data when powered off, unlike DRAM, and the technology can endure at least 10 million write cycles, compared to an average flash USB stick, which tops out at 3,000 write cycles. 
A new momentum from IBM Research (at the IEEE International Memory Workshop in Paris) has demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).
One can learn that, in terms of applications, IBM scientists envision standalone PCM as well …