‘’First’’ 3D Vertical NAND Flash: Samsung Starts Mass Production.

As expected and following the years of efforts, Samsung Electronics Co., has begun mass producing the industry’s ‘’first’’ three-dimensional (3D) Vertical NAND (V-NAND) flash memory.

Ceonnectikpeople may recall that, Samsung’s new V-NAND offers:

·        a 128 gigabit (Gb) density in a single chip,

·        utilizes the company’s proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array.

·        Is able to provide over twice the scaling of 20nm-class planar NAND flash.

·         can stack as many as 24 cell layers vertically

Connectikpeople has also observed that, the new 3D V-NAND brings an increase of a minimum of 2X to a maximum 10X higher reliability, twice the write performance over conventional 10nm-class floating gate NAND flash memory.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of televisions, smartphones, personal computers, printers, cameras, home appliances, LTE systems, medical devices, semiconductors and LED solutions. We employ 236,000 people across 79 countries with annual sales exceeding US$187.8 billion.